The true surface temperature of a silicon wafer and the related etch rate in a CF4 plasma
نویسنده
چکیده
2014 By means of a resistance thermometer structure diffused into the surface of a silicon wafer the temperature has been found to increase within a minute to over 100°C in a CF4 plasma. In contrast the system temperature rises only about 5 °C in the same time. This applies to a system in the tunnel configuration. In a parallel plate system the rise is far less steep and even within the usual etching time an equilibrium temperature is reached. The dependence of the etch rate on the surface temperature has been measured. In the interval from R.T. and 100 °C the etch rate stays nearly the same. Therefore temperature is no significant parameter for establishing desired etch rates.
منابع مشابه
VERY DEEP TRENCHES IN SILICON WAFER USING DRIE METHOD WITH ALUMINUM MASK
Abstract: In this paper, a DRIE process for fabricating MEMS silicon trenches with a depth of more than 250 m is described. The DRIE was produced in oxygen-added sulfur hexafluoride (SF6) plasma, with sample cooling to cryogenic temperature using a Plasmalab System 100 ICP 180 at different RF powers. A series of experiments were performed to determine the etch rate and selectivity of the some m...
متن کاملChemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures
The chemical dry etching of silicon nitride (Si3N4)and silicon nitride (SiO2) in a downstream plasma reactor using CF4, O2, and N2 has been investigated. A comparison of the Si3N4 and SiO2 etch rates with that of polycrystalline silicon shows that the etch rates of Si3N4 and SiO2 are not limited by the amount of fluorine arriving on the surface only. Adding N2 in small amounts to a CF4 /O2 micr...
متن کاملGas utilization in remote plasma cleaning and stripping applications
Nitrogen trifluoride (NF3) is a likely candidate to replace perfluorocompounds ~PFCs! in stripping and reactor cleaning applications. In this article, the performance of NF3 for the etching of silicon, silicon dioxide (SiO2), and silicon nitride (Si3N4) is compared with that of CF4 , C2F6 , and C3F8 . The performance measures emphasized in this article are the dissociation efficiency of the par...
متن کاملChemical downstream etching of silicon–nitride and polycrystalline silicon using CF4/O2/N2: Surface chemical effects of O2 and N2 additives
By comparing the etching characteristics of silicon and silicon nitride in CF4 /O2 /N2 microwave downstream plasmas we demonstrate clearly how low concentrations of energetic species can play a dominant role in remote plasma processing: Injection of 5% N2 to a CF4 /O2 plasma increases the silicon nitride etch rate by a factor of 7, while not significantly affecting the bulk composition of the d...
متن کاملGaussian Process Regression for Virtual Metrology of Plasma Etch
Plasma etch is a complex semiconductor manufacturing process in which material is removed from the surface of a silicon wafer using a gas in plasma form. As the process etch rate cannot be measured easily during or after processing, virtual metrology is employed to predict the etch rate instantly using ancillary process variables. Virtual metrology is the prediction of metrology variables using...
متن کامل